Semiconductor device and method of forming WLCSP

ABSTRACT

A semiconductor substrate contains a plurality of semiconductor die with a saw street between the semiconductor die. A plurality of bumps is formed over a first surface of the semiconductor die. An insulating layer is formed over the first surface of the semiconductor die between the bumps. A portion of a second surface of the semiconductor die is removed and a conductive layer is formed over the remaining second surface. The semiconductor substrate is disposed on a dicing tape, the semiconductor substrate is singulated through the saw street while maintaining position of the semiconductor die, and the dicing tape is expanded to impart movement of the semiconductor die and increase a space between the semiconductor die. An encapsulant is deposited over the semiconductor die and into the space between the semiconductor die. A channel is formed through the encapsulant between the semiconductor die to separate the semiconductor die.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation application of the earlier U.S.Utility patent application to Grivna entitled “Semiconductor Device andMethod of Forming WLCSP,” application Ser. No. 15/446,182, filed Mar. 1,2017, now pending, the disclosure of which is hereby incorporatedentirely herein by reference.

TECHNICAL FIELD

Aspects of this document relate in general to semiconductor devices and,more particularly, to a semiconductor device and method of forming awafer level chip scale package (WLCSP).

BACKGROUND

A semiconductor wafer or substrate can be made with a variety of basesubstrate materials, such as silicon (Si), germanium, aluminum nitride(AlN), gallium arsenide (GaAs), gallium nitride (GaN), aluminum galliumnitride over gallium nitride (AlGaN/GaN), indium phosphide, siliconcarbide (SiC), or other bulk material for structural support. Aplurality of semiconductor die is formed on the wafer separated by anon-active, inter-die substrate area or saw street. The saw streetprovides cutting areas to singulate the semiconductor wafer intoindividual semiconductor die.

In some cases, the semiconductor die are singulated from thesemiconductor wafer and then individually packaged for electricalinterconnect and encapsulation for environmental isolation. For small,common technology semiconductor die, such as a small signal diode, thedie-level semiconductor packaging cost is often significantly greaterthan the cost of the die.

To reduce packaging cost, the semiconductor die can be packaged while inwafer form, e.g., in a wafer level chip scale package (WLCSP). Once inpackage form, the semiconductor die are separated from the wafer. WLCSPprovides lower cost, reduces package size, and enhances thermalconduction characteristics. In WLCSP, the spacing between adjacentsemiconductor die must be sufficiently large to perform the packagingoperations, e.g., encapsulation and electrical interconnect whileleaving sufficient scribe line width for singulation of the packageddie.

In one known double-encapsulation WLCSP process, a plurality of bumps isformed on the active surface of the semiconductor die while in waferform. A channel or trench is cut partially into the bulk substrate inthe scribe line of the semiconductor wafer between the die by a wide sawblade. A first encapsulant is deposited over the active surface of thesemiconductor die and into the channel. A portion of the firstencapsulant is removed by a grinding operation to expose the bumps. Aportion of the base substrate material is removed from a back surface,opposite the active surface, in a grinding operation to thin the waferand expose the first encapsulant in the channel. A second encapsulant isdeposited over the back surface of the semiconductor die and firstencapsulant. The encapsulated semiconductor die are then singulatedleaving the first encapsulant on the side surface of the semiconductordie and the second encapsulant on the back surface. Thedouble-encapsulation WLCSP process requires a large inter-die spacing,which can approach the die size, and many processing steps. The largeinter-die spacing reduces the die yield per wafer and increases overallmanufacturing cost.

In another WLCSP, a single encapsulant is deposited on the back surfaceand side surfaces of the semiconductor die. The single encapsulationWLCSP process still requires a large inter-die spacing in order todeposit encapsulant on the side surfaces of the semiconductor die.Again, the large inter-die spacing reduces the die yield per wafer andincreases overall manufacturing cost.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1a-1c illustrate a semiconductor substrate with a plurality ofsemiconductor die separated by a saw street;

FIGS. 2a-2k illustrate a process of packaging a semiconductor die at thewafer-level;

FIGS. 3a-3b illustrate the WLCSP post singulation;

FIGS. 4a-4b illustrate an embodiment of the WLCSP with encapsulantcovering a portion of the active surface of the semiconductor die;

FIGS. 5a-5j illustrate a process of packaging a semiconductor die withbackside conductive layer at the wafer-level; and

FIGS. 6a-6b illustrate the WLCSP with backside conductive layer postsingulation.

DETAILED DESCRIPTION OF THE DRAWINGS

The following describes one or more embodiments with reference to thefigures, in which like numerals represent the same or similar elements.While the figures are described in terms of the best mode for achievingcertain objectives, the description is intended to cover alternatives,modifications, and equivalents as may be included within the spirit andscope of the disclosure. The term “semiconductor die” as used hereinrefers to both the singular and plural form of the words, andaccordingly, can refer to both a single semiconductor device andmultiple semiconductor devices.

FIG. 1a shows a semiconductor wafer or substrate 100 with a basesubstrate material 102, such as Si, germanium, AlN, GaAs, GaN,AlGaN/GaN, indium phosphide, SiC, or other bulk material for structuralsupport. Semiconductor substrate 100 has a width or diameter of 100-450millimeters (mm) and thickness of about 800 micrometers (□m). Aplurality of semiconductor die 104 is formed on substrate 100 separatedby a non-active, inter-die substrate area or saw street 106. Saw street106 provides cutting areas to singulate semiconductor substrate 100 intoindividual semiconductor die 104. In one embodiment, semiconductor die104 has dimensions of 195 □m by 400 □m, and saw street 106 has a widthof 10-20 □m.

FIG. 1b shows a portion of semiconductor substrate 100. In particular, awidth of saw street 106 b between semiconductor die 104 a andsemiconductor die 104 b is greater than a width of saw street 106 abetween semiconductor die 104 a and semiconductor die 104 c tocompensate for non-linear expansion of the dicing tape in thex-direction and y-direction, as described further in FIG. 2g . In oneembodiment, the width of saw street 106 b is 20 □m and the width of sawstreet 106 a is 10 □m.

FIG. 1c shows a cross-sectional view of a portion of semiconductorsubstrate 100. Each semiconductor die 104 includes a back surface 108and active surface or region 110 containing analog or digital circuitsimplemented as active devices, passive devices, conductive layers, anddielectric layers formed within the die and electrically interconnectedaccording to the electrical design and function of the die. For example,the circuit may include one or more transistors, diodes, and othercircuit elements formed within active surface or region 110 to implementanalog circuits or digital circuits. In one embodiment, semiconductordie 104 implements a diode, transistor, or other discrete semiconductordevice. Semiconductor die 104 may also contain a digital signalprocessor (DSP), microcontroller, ASIC, standard logic, amplifiers,clock management, memory, interface circuit, optoelectronics, and othersignal processing circuits. Semiconductor die 104 may also containintegrated passive devices (IPDs), such as inductors, capacitors, andresistors, for RF signal processing.

An electrically conductive layer 112 is formed over active surface 110using PVD, CVD, electrolytic plating, electroless plating process, orother suitable metal deposition process. Conductive layer 112 includesone or more layers of aluminum (Al), copper (Cu), tin (Sn), nickel (Ni),gold (Au), silver (Ag), titanium (Ti), titanium tungsten (TiW), or othersuitable electrically conductive material. Conductive layer 112 operatesas contact pads electrically connected to the circuits, e.g., anoderegion and cathode region of the diode, on active surface 110.

FIGS. 2a-2k show a process of packaging a semiconductor die at thewafer-level. FIG. 2a illustrates a portion of semiconductor substrate100. An electrically conductive bump material is deposited overconductive layer 112 using an evaporation, electrolytic plating,electroless plating, ball drop, or screen printing process. The bumpmaterial can be Al, Sn, Ni, Au, Ag, Pb, Bi, Cu, solder, and combinationsthereof, with an optional flux solution. For example, the bump materialcan be eutectic Sn/Pb, high-lead solder, or lead-free solder. The bumpmaterial is bonded to conductive layer 112 using a suitable attachmentor bonding process. In one embodiment, the bump material is reflowed byheating the material above its melting point to form balls or bumps 120having a width of 120 □m and height of 20 □m. In some applications,bumps 120 are reflowed a second time to improve electrical contact toconductive layer 112. In one embodiment, bumps 120 are formed over anunder bump metallization (UBM) layer. Bumps 120 can also be compressionbonded or thermocompression bonded to conductive layer 112. Bumps 120represent one type of interconnect structure that can be formed overconductive layer 112. The interconnect structure can also use bondwires, conductive paste, stud bump, micro bump, or other electricalinterconnect.

In FIG. 2b , a thick insulating layer 122 is formed on active surface110 between bumps 120 using PVD, CVD, printing, lamination, spincoating, spray coating, sintering, or other process. Insulating layer122 contains one or more layers of insulating material, such as silicondioxide (SiO2), silicon nitride (Si3N4), silicon oxynitride (SiON),tantalum pentoxide (Ta2O5), aluminum oxide (Al2O3), hafnium oxide(HfO2), benzocyclobutene (BCB), polyimide (PI), polybenzoxazoles (PBO),mold compound, polymer, or other dielectric material having similarstructural and insulating properties. Insulating layer 122 substantiallyfills the gap between bumps 120 over active surface 110. In oneembodiment, insulating layer 122 is formed over the entire activesurface 110 and surround bumps 120, to provide coverage of activesurface 110 where later formed encapsulant may not reach, as describedin FIGS. 2b-2k and 3. Alternatively, insulating layer 122 is formedbetween bumps 120 contacting at least one side of each bump. In thiscase, the area between bumps 120 and the side surface of semiconductordie 104 remain devoid of insulating layer 122, see FIGS. 4a -4 b.Insulating layer 122 can be formed prior to bumps 120, in which caseopenings are formed in the insulating layer for the bumps.

FIG. 2c shows a plan view of semiconductor substrate 100 with bumps 120and insulating layer 122 formed over semiconductor die 104. A width ofsaw street 106 b is greater than a width of saw street 106 a tocompensate for differences, if any, in the expansion of the dicing tapein the x-direction and y-direction. FIG. 2b is a cross-sectional viewtaken through line 2 b-2 b in FIG. 2 c.

In FIG. 2d , semiconductor substrate 100 with bumps 120 and insulatinglayer 122 is positioned with the bumps oriented toward backgrinding tape130. Adhesive layer 132 contacts bumps 120 and insulating layer 122 andsecures semiconductor substrate 100 to backgrinding tape 130 while inwafer form. A portion of base substrate material 102 is removed fromback surface 108 by grinder 134, leaving planar surface 136, and a25-200 □thickness T₁ for semiconductor wafer 100.

In FIG. 2e , semiconductor substrate 100 with backgrinding tape 130 isinverted with surface 136 oriented toward dicing tape 140, includingexpandable polymer base material 140 a and expandable adhesive layer 140b. Semiconductor substrate 100 is mounted to adhesive layer 140 b ofdicing tape 140.

In FIG. 2f , backgrinding tape 130 is removed and semiconductorsubstrate 100 is singulated through saw street 106 by plasma etchingwhile maintaining relative position of semiconductor die 104. Plasmaetching has advantages of forming precision side surfaces along sawstreets 106 and different saw street widths on the same wafer, whileretaining the structure and integrity of the base substrate material.Alternatively, semiconductor substrate 100 is singulated using a sawblade or laser cutting tool 148. Semiconductor die 104 remain affixed todicing tape 140 post singulation.

In FIG. 2g , dicing tape 140 is expanded in the x-direction,y-direction, and possibly z-direction to impart movement ofsemiconductor die 104 to introduce a gap or space 150 and to increasespacing between all adjacent semiconductor die 104. Dicing tape 140 canbe expanded in the x-direction, y-direction, and z-direction (see arrows152, 153) by vertical plunger 154 moving in the z-direction, or anexpansion table moving in the x-direction and y-direction. In oneembodiment, space 150 between all adjacent semiconductor die 104 has awidth of 75 □m or more, see FIG. 2h . The width across all semiconductordie 104 after expansion increases by about 10-30%.

Since dicing tape 140 does not necessarily expand the same in thex-direction and y-direction, the width of saw streets 106 a-106 b maydiffer in the x-direction or y-direction between adjacent semiconductordie 104, see FIG. 1b , to compensate for different expansion of thedicing tape in the x-direction and y-direction.

In FIG. 2i , a carrier or temporary substrate 156 contains sacrificialbase material, such as overmold tape, polymer, beryllium oxide, silicon,glass, or other suitable low-cost, rigid material for structuralsupport. An interface layer or double-sided tape 158 is formed overcarrier 156 as a temporary adhesive bonding film, etch-stop layer, orthermal release layer. Carrier 156 and interface layer 158 is disposedover bumps 120, insulating layer 122, and space 150 for structuralsupport.

In FIG. 2j , semiconductor assembly 160 with spacing 150 betweensemiconductor die 104, as disposed on carrier 156 and interface layer158, is inverted and dicing tape 140 is removed. An encapsulant ormolding compound 162 is deposited over semiconductor die 104 and intospace 150 to cover side surfaces 164 of the semiconductor die using apaste printing, compressive molding, transfer molding, liquidencapsulant molding, vacuum lamination, film-assisted molding, spincoating, or other suitable applicator. Encapsulant 162 can be polymercomposite material, such as epoxy resin with filler, epoxy acrylate withfiller, or polymer with proper filler. Encapsulant 162 isnon-conductive, provides physical support, and environmentally protectsthe semiconductor device from external elements and contaminants.Encapsulant 162 is deposited after bumps 120 are formed and after space150 is formed.

In FIG. 2k , semiconductor assembly 160 is again inverted with bumps 120and insulating layer 122 oriented away from dicing tape 166, includingpolymer base material 166 a and adhesive layer 166 b. Semiconductorassembly 160 is mounted to adhesive layer 166 b of dicing tape 166.Carrier 156 and interface layer 158 are removed by UV light, chemicaletching, mechanical peeling, chemical mechanical planarization (CMP),mechanical grinding, thermal bake, laser scanning, or wet stripping toexpose bumps 120 and insulating layer 122. Channels 170 are formedcompletely through encapsulant 162 and into dicing tape 166 around eachsemiconductor die 104 using a saw blade or laser cutting tool 172. Aportion of encapsulant 162 remains on side surfaces 164 of semiconductordie 104.

FIG. 3a shows WLCSP 176 post singulation with bumps 120 exposed frominsulating layer 122 for external interconnect. Encapsulant 162 coversside surfaces 164 and surface 136 of semiconductor die 104. In oneembodiment, WLCSP 176 has dimensions of 235 □m by 440 □m. The WLCSPprocess described in FIGS. 2a-2k can provide 30-40% more semiconductordie 104 per semiconductor substrate 100 with complete wafer-levelpackaging, i.e., encapsulation and electrical interconnect of thesemiconductor die. WLCSP 176 reduces manufacturing costs and increasesdie yield per wafer. FIG. 3b is a plan view of WLCSP 176 with bumps 120exposed from insulating layer 122 and encapsulant 162 covering sidesurfaces 164 of semiconductor die 104.

FIG. 4a shows an embodiment of WLCSP 180 with insulating layer 122formed between bumps 120. In this case, the area between bumps 120 andside surfaces 164 of semiconductor die 104 is devoid of insulating layer122. With reference to FIG. 2j , encapsulant 162 covers portions ofactive surface 110 not covered by insulating layer 122, e.g., betweenbumps 200 and side surfaces 164 of semiconductor die 104. In oneembodiment, WLCSP 180 has dimensions of 235 □m by 440 □m. The WLCSPprocess can provide 30-40% more semiconductor die 104 per semiconductorsubstrate 100 with complete wafer-level packaging, i.e., encapsulationand electrical interconnect of the semiconductor die. WLCSP 180 reducesmanufacturing costs and increases die yield per wafer. FIG. 4b is a planview of WLCSP 180 with bumps 120 exposed from insulating layer 122 andencapsulant 162 covering side surfaces 164 and a portion of activesurface 110 of semiconductor die 104.

FIGS. 5a-5g show a process of packaging a semiconductor die withbackside conductive layer at the wafer-level. Continuing from FIG. 2a ,a thick insulating layer 182 is formed on active surface 110 betweenbumps 120 using PVD, CVD, printing, lamination, spin coating, spraycoating, sintering or thermal oxidation. Insulating layer 182 containsone or more layers of insulating material, such as SiO2, Si3N4, SiON,Ta2O5, Al2O3, HfO2, BCB, PI, PBO, polymer, or other dielectric materialhaving similar structural and insulating properties. Insulating layer182 substantially fills the gap between bumps 120 and contacts at leastone side of each bump over active surface 110. The area between bumps120 and the side surface of semiconductor die 104 remains devoid ofinsulating layer 182.

FIG. 5b shows a plan view of semiconductor substrate 100 with bumps 120and insulating layer 182 formed over semiconductor die 104. A width ofsaw street 106 b is greater than a width of saw street 106 a tocompensate for any different expansion of the dicing tape in thex-direction and y-direction. FIG. 5a is a cross-sectional view takenthrough line 5 a-5 a in FIG. 5 b.

In FIG. 5c , semiconductor substrate 100 with bumps 120 and insulatinglayer 182 is positioned with the bumps oriented toward backgrinding tape184. Adhesive layer 185 contacts bumps 120 and insulating layer 182 andsecures semiconductor substrate 100 to backgrinding tape 184 while inwafer form. A portion of base substrate material 102 is removed fromback surface 108 by grinder 187, leaving planar surface 186, and a25-300 □m thickness T₂ for semiconductor wafer 100.

In FIG. 5d , an electrically conductive layer 188 is formed over surface186 using PVD, CVD, electrolytic plating, electroless plating process,or other suitable metal deposition process. Conductive layer 188includes one or more layers of Al, Cu, Sn, Ni, Au, Ag, Ti, TiW, or othersuitable electrically conductive material. Conductive layer 188 reduceson-resistance and current density of semiconductor die 104.Alternatively, conductive layer 188 can be patterned to provideincreased functionality or to remove material over the saw street.

In FIG. 5e , semiconductor substrate 100 with backgrinding tape 184 isinverted with conductive layer 188 oriented toward dicing tape 190,including expandable polymer base material 190 a and expandable adhesivelayer 190 b. Semiconductor substrate 100 is mounted to adhesive layer190 b of dicing tape 190.

In FIG. 5f , backgrinding tape 184 is removed and semiconductorsubstrate 100 is singulated through saw street 106 by plasma etching.Plasma etching has advantages of forming precision side surfaces alongsaw streets 106, while retaining the structure and integrity of the basesubstrate material. Alternatively, semiconductor substrate 100 issingulated using a saw blade or laser cutting tool 196. A break or cutis made through conductive layer 188 within saw street 106 to permitexpansion of dicing tape 190 and movement of semiconductor die 104.Semiconductor die 104 remain affixed to dicing tape 190 postsingulation.

In FIG. 5g , dicing tape 190 is expanded in the x-direction,y-direction, and possibly z-direction to impart movement ofsemiconductor die 104 to introduce a gap or space 198 and to increasespacing between all adjacent semiconductor die 104. Dicing tape 190 canbe expanded by a vertical plunger moving in the z-direction, or anexpansion table moving in the x-direction and y-direction, similar toFIG. 2g . In one embodiment, space 198 between all adjacentsemiconductor die 104 has a width of 75 □m or more, see FIG. 2h . Thewidth across all semiconductor die 104 after expansion increases byabout 10-30%.

Since dicing tape 190 does not necessarily expand the same in thex-direction and y-direction, the width of saw streets 106 a-106 b maydiffer between adjacent semiconductor die 104, see FIG. 1b , tocompensate for different expansion of the dicing tape in the x-directionand y-direction.

In FIG. 5h , a carrier or temporary substrate 200 contains sacrificialbase material, such as overmold tape, polymer, beryllium oxide, silicon,glass, or other suitable low-cost, rigid material for structuralsupport. An interface layer or double-sided tape 202 is formed overcarrier 200 as a temporary adhesive bonding film, etch-stop layer, orthermal release layer. Carrier 200 and interface layer 202 is disposedover bumps 120, insulating layer 182, and space 198 for structuralsupport.

In FIG. 5i , semiconductor assembly 210 with spacing 198 betweensemiconductor die 104, as disposed on carrier 200 and interface layer202, is inverted and dicing tape 190 is removed. With the dicing tape190 removed, a process such as water spray, CO2 spray, or other cleaningmethod can be used to remove any metal 188 remaining between die inopening 198. An encapsulant or molding compound 212 is deposited oversemiconductor die 104 and into space 198 to cover side surfaces 214 ofthe semiconductor die using a paste printing, compressive molding,transfer molding, liquid encapsulant molding, vacuum lamination,film-assisted molding, spin coating, or other suitable applicator.Encapsulant 212 can be polymer composite material, such as epoxy resinwith filler, epoxy acrylate with filler, or polymer with proper filler.Encapsulant 212 is non-conductive, provides physical support, andenvironmentally protects the semiconductor device from external elementsand contaminants. Encapsulant 212 is deposited after bumps 120 areformed and after space 198 is formed.

In FIG. 5j , semiconductor assembly 210 is again inverted with bumps 120and insulating layer 182 oriented away from dicing tape 216, includingpolymer base material 216 a and adhesive layer 216 b. Semiconductorassembly 210 is mounted to adhesive layer 216 b of dicing tape 216.Carrier 200 and interface layer 202 are removed by UV light, chemicaletching, mechanical peeling, CMP, mechanical grinding, thermal bake,laser scanning, or wet stripping to expose bumps 120 and insulatinglayer 122. Channels 220 are formed completely through encapsulant 212and into dicing tape 216 around each semiconductor die 104 using a sawblade or laser cutting tool 222. A portion of encapsulant 212 remains onside surfaces 214 of semiconductor die 104.

FIG. 6a shows WLCSP 226 post singulation with bumps 120 exposed frominsulating layer 182 for external interconnect. Encapsulant 212 coveringside surfaces 214, conductive layer 188, and surface 186 ofsemiconductor die 104. In one embodiment, WLCSP 226 has dimensions of235 □m by 440 □m. The WLCSP process described in FIGS. 5a-5j can provide30-40% more semiconductor die 104 per semiconductor substrate 100 andstill provides complete wafer-level packaging, i.e., encapsulation andelectrical interconnect of the semiconductor die. WLCSP 226 reducesmanufacturing costs and increases die yield per wafer. FIG. 6b is a planview of WLCSP 226 with bumps 120 exposed from insulating layer 182 andencapsulant 212 covering side surfaces 214 and a portion of activesurface 110 of semiconductor die 104.

While one or more embodiments have been illustrated and described indetail, the skilled artisan will appreciate that modifications andadaptations to those embodiments may be made without departing from thescope of the present disclosure.

What is claimed is:
 1. A method of making a semiconductor device,comprising: providing a semiconductor substrate including a plurality ofsemiconductor die with a saw street between the semiconductor die; afterproviding the semiconductor substrate, forming a plurality of bumps overa first surface of the semiconductor die; after forming the plurality ofbumps, forming an insulating layer over the first surface of thesemiconductor die between the bumps; after forming the insulating layer,singulating the semiconductor substrate through removing substratematerial through an entire thickness of the semiconductor substrate inthe saw street; after singulating the semiconductor substrate, movingthe semiconductor die to increase a space between the semiconductor die;after moving the semiconductor die, depositing an encapsulant over thesemiconductor die and into the space between the semiconductor die; andafter depositing the encapsulant, forming a channel through theencapsulant between the semiconductor die to separate the semiconductordie.
 2. The method of claim 1, wherein removing the substrate materialfurther comprises removing the substrate material using a saw blade. 3.The method of claim 1, further including depositing the encapsulant overa portion of the first surface of the semiconductor die.
 4. The methodof claim 1, further including removing a portion of a second surface ofthe semiconductor die opposite the first surface of the semiconductordie.
 5. The method of claim 1, further including forming a conductivelayer over a second surface of the semiconductor die opposite the firstsurface of the semiconductor die.
 6. The method of claim 1, furtherincluding: disposing the semiconductor substrate over a dicing tape; andexpanding the dicing tape to impart movement of the semiconductor die toincrease the space between the semiconductor die.
 7. The method of claim1, wherein a first distance between a first semiconductor die and anadjacent second semiconductor die on the semiconductor substrate isgreater than a second distance between the first semiconductor die andan adjacent third semiconductor die on the semiconductor substrate.
 8. Amethod of making a semiconductor device, comprising: providing asemiconductor substrate including a plurality of semiconductor die;after providing the semiconductor substrate, forming a plurality ofbumps over a first surface of the semiconductor die; after forming theplurality of bumps, forming an insulating layer over the first surfaceof the semiconductor die between the bumps; after forming the insulatinglayer, singulating the semiconductor substrate between the semiconductordie, wherein there is no backgrinding of the semiconductor substrateafter singulating the semiconductor substrate; after singulating thesemiconductor substrate, expanding a space between the semiconductordie; after expanding the space, depositing an encapsulant over thesemiconductor die and into the space between the semiconductor die; andafter depositing the encapsulant, forming a channel through theencapsulant between the semiconductor die to separate the semiconductordie.
 9. The method of claim 8, further including forming the insulatinglayer over the first surface of the semiconductor die and around thebumps.
 10. The method of claim 8, further including depositing theencapsulant over a portion of the first surface of the secondsemiconductor die.
 11. The method of claim 8, further including removinga portion of a second surface of the semiconductor die opposite thefirst surface of the semiconductor die.
 12. The method of claim 8,further including forming a conductive layer over a second surface ofthe semiconductor die opposite the first surface of the semiconductordie.
 13. The method of claim 8, further including: disposing thesemiconductor substrate over a dicing tape; and expanding the dicingtape to expand the space between the semiconductor die.
 14. The methodof claim 8, wherein a first distance between a first semiconductor dieand an adjacent second semiconductor die on the semiconductor substrateis greater than a second distance between the first semiconductor dieand an adjacent third semiconductor die on the semiconductor substrate.15. A method of making a semiconductor device, comprising: forming aplurality of semiconductor die on a first surface of a semiconductorsubstrate; after forming the plurality of semiconductor die, forming aplurality of bumps over a first surface of the semiconductor substrate;after forming the plurality of bumps, forming an insulating layerbetween the plurality of bumps; after forming the insulating layer,applying a dicing tape to a second surface of the plurality ofsemiconductor die opposite the first surface; after applying the dicingtape, forming a first channel entirely through the semiconductorsubstrate between the semiconductor die; after forming the firstchannel, widening the first channel through expanding the dicing tape;after widening the first channel, filling the first channel with anencapsulant; and after filling the first channel, forming a secondchannel through the encapsulant to separate the plurality ofsemiconductor die.
 16. The method of claim 15, wherein forming the firstchannel further comprising using a saw blade.
 17. The method of claim15, wherein the second surface of the semiconductor substrate is notbackground after forming the first channel through the semiconductorsubstrate.
 18. The method of claim 15, further comprising forming aconductive layer over the second surface of the semiconductor substrate.19. The method of claim 15, wherein the first channel is widened to awidth of at least 75 micrometers.
 20. The method of claim 15, whereinthe plurality of semiconductor die includes a discrete semiconductordevice.